 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BRIGHT LED ELECTRONICS CORP. SINCE 1981 BPT-NP23C2 SIDE- LOOK PACKAGE PHOTOTRANSISTOR Features 1. 2. 3. Wide range of collector current. High sensitivity. Low cost plastic package. 2.5(.098) 1.7(.067) Package Dimensions: 3.8(.150) 4.0(.157) 4.6(.181) 1.6(.063) 4.5(.177) 2.9(.114) 1.8(.071) 0.65(.026) 1.5(.059) 4. Lens Appearance: Water Clear. 5. This product doesn't contain restriction substance, comply ROHS standard 14.0(.551) MIN. 0.5(.020) Description The BPT-NP23C2 is a NPN silicon phototransistor mounted in a lensed ,water clear plastic package . The lensing effect of the package allows an acceptance half view angle of 50that is measured from the optical axis to the half power point . NOTES: 1. Emitter 2. Collector 1.0(.039) MIN. 1 2 0.5(.019) 2.54(.100) 1.All dimensions are in millimeters (inches). 2.Tolerance is 0.25mm (0.01'') unless otherwise specified. 3.Lead spacing is measured where the leads emerge from the package 4.Specifications are subject to change without notice Absolute Maximum Ratings(Ta=25) Parameter Power Dissipation Collector- Emitter Voltage Emitter- Collector Voltage Operating Temperature Storage Temperature Range Lead Soldering Temperature Maximum Rating 100 30 5 -45~+85 -45~+100 260 for 5 seconds Unit mW V V Rev:2.2 Page1 of 3 BRIGHT LED ELECTRONICS CORP. SINCE 1981 BPT-NP23C2 Electrical Characteristics (TA=25 unless otherwise noted) PARAMETER Collector- Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector- Emitter Saturation Voltage Rise Time Fall Time Collector Dark Current Light Current SYMBOL V(BR)CEO V(BR)ECO VCE(SAT) Tr Tf Id IC (ON) MIN 30 5 TYP 25 25 13 MAX 0.5 100 UNITS V V V S nA mA TEST CONDITIONS IC=1 mA Ee=0mW/cm2 IR=0.1mA Ee=0 mW/cm2 IC=0.1 mA Ee=1.0mW/cm2 VCE =5V RL=1K F=100HZ VCE=10V Ee=0 mW/cm2 VCE=5V Ee=1.0mW/cm2 Typical Optical-Electrical Characteristic Curves (uA) 10000 1000 FIG.1 Dark Current Vs. Ambient Temperature (mW) 120 100 Power Dissipation Pd 80 60 40 20 0 FIG.2 Power Dissipation Vs. Ambient Temperature 100 Dark Current 10 1 0.1 0.01 0 20 60 80 100 40 Ambient Temperature 120 (C) -25 0 25 50 75 100 Ambient Temperature 125 (C) FIG.3 Rise And Fall Time Vs. Load Resistance (us) 20 Vcc=5V FIG.4 Relative Collector Current Vs. Irradiance 2.5 Relative Collector Current Vce=5V 16 Rise and Fall Time 12 8 4 0 F=100Hz Tf Tr 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 2 3.0 (mW/cm ) 0 0.2 0.4 0.6 0.8 1.0 (K ) Irradiance Load Resistance Rev:2.2 Page2 of 3 BRIGHT LED ELECTRONICS CORP. SINCE 1981 BPT-NP23C2 Tapping and packaging specifications(Units: mm) Packaging Bag Dimensions Notes: 11000pcs per bag, 8Kpcs per box. 2All dimensions are in millimeters(inches). 3Specifications are subject to change without notice. Rev:2.2 Page3 of 3 BRIGHT LED ELECTRONICS CORP. SINCE 1981 BPT-NP23C2 Phototransistor Specification Commodity: Phototransistor Collector Current Bin Limits (At 1mW/ cm2) BIN CODE P8 P9 P10 P11 P12 P13 Min.(mA) 0.799 0.985 1.050 1.250 1.400 1.550 Max.(mA) 0.985 1.050 1.250 1.400 1.550 1.700 |
Price & Availability of BPT-NP23C2
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |